Design of Sequential Circuits Using MV Gates in Nanotechnology

Authors(2) :-Bahram Dehghan, Ahad Salimi

Recent developments in reversible logic allow for improved quantum computer algorithms and schemes for corresponding computer architectures. Quantum dot Cellular Automata is an emerging technology for development of logic circuits based on nanotechnology, and it is one of the replacements for designing high performance computing over existing CMOS technology. Different logic gates like MV, NOT under QCA nanotechnology are introduced. Any Boolean functions, limited in thirteen number standard Boolean functions, are synthesized by MV and NNI gates or simply NNI gates alone, eliminating inverter (NOT) gate. The architecture of AND, OR, NAND, NOR gates by using MV gates have shown. Also, one of the other most applicable complete and efficient gates in digital systems and network are the XOR and XNOR gates. The design models of these gates have been exhibited. In this paper, we present the design of sequential circuits (RS Flip Flop, D Flip Flop, JK Flip Flop, T Flip Flop, Master Slave JK Flip Flop) and full subtractor/adder circuits based on MV gates and NOT gates. Furthermore, the number of gates and kind of them is considered.

Authors and Affiliations

Bahram Dehghan
Department of Electrical Engineering, Sarvestan Branch, Islamic Azad University, Sarvestan, Iran
Ahad Salimi
Department of Electrical Engineering, Zarin dasht Branch, Islamic Azad University, Zarin dasht, Iran

Sequential Circuit, MV Gates, Reversible Gate

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Publication Details

Published in : Volume 1 | Issue 2 | March-April 2015
Date of Publication : 2015-04-18
License:  This work is licensed under a Creative Commons Attribution 4.0 International License.
Page(s) : 479-485
Manuscript Number : IJSRSET1522145
Publisher : Technoscience Academy

Print ISSN : 2395-1990, Online ISSN : 2394-4099

Cite This Article :

Bahram Dehghan, Ahad Salimi, " Design of Sequential Circuits Using MV Gates in Nanotechnology, International Journal of Scientific Research in Science, Engineering and Technology(IJSRSET), Print ISSN : 2395-1990, Online ISSN : 2394-4099, Volume 1, Issue 2, pp.479-485, March-April-2015.
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