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Single Electron Transistor Made Nano IC Adder for High Speed Computing

Authors(6):

Sanjay Bhadra, Shilpa Saha, Abhradeep Ghosh, Susamman Biswas, Mouktik Bhattacharya, Shantanu Bhadra
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Single electron transistor (SET) is a key element of present device research which can offer high operating speed with low power consumption. Downscaling of minimum feature size of CMOS transistor has been the basis for advancement in ultra large integration for many years. But by no means it has turned to be a never ending process. The present work demonstrates a hypothetical approach to design a single electron device based commercially viable logic circuit to be embedded in next generation IC's.

Sanjay Bhadra, Shilpa Saha, Abhradeep Ghosh, Susamman Biswas, Mouktik Bhattacharya, Shantanu Bhadra

SET, SED, Adder, ,Coulomb Island,Nano IC

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Publication Details

Published in : Volume 2 | Issue 3 | May-June - 2016
Date of Publication Print ISSN Online ISSN
2016-06-30 2395-1990 2394-4099
Page(s) Manuscript Number   Publisher
559-561 IJSRSET1623155   Technoscience Academy

Cite This Article

Sanjay Bhadra, Shilpa Saha, Abhradeep Ghosh, Susamman Biswas, Mouktik Bhattacharya, Shantanu Bhadra, "Single Electron Transistor Made Nano IC Adder for High Speed Computing", International Journal of Scientific Research in Science, Engineering and Technology(IJSRSET), Print ISSN : 2395-1990, Online ISSN : 2394-4099, Volume 2, Issue 3, pp.559-561, May-June-2016.
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