A Study on Conventional SRAM and Adiabatic SRAM

Authors(3) :-J. Dhanasekar, Dr. V. K. Sudha, Rinu Johnson

Semiconductor memory is an electronic data storage device, often used as computer memory, implemented on a semiconductor-based integrated circuit. It is made in many different types and technologies. Most modern semiconductor memory devices are implemented allowing random access, which means that it takes the same amount of time to access any memory location, so data can be efficiently accessed in any random order. Static random-access memory (SRAM) is a type of semiconductor memory that uses bistable latching circuitry (flip-flop) to store each bit. It consists of 6 Transistors in the form of cross coupled inverters. This storage cell has two stable states which are used to denote 0 and 1. Two additional access transistors serve to control the access to a storage cell during read and write operations. In CMOS circuits there is short circuit power dissipation so there exist path directly from VDD to ground, hence leading to short circuit current. This drawback can be overcome by adiabatic technique. The tool used to obtain the results is Tanner EDA tool. The power obtained for the conventional SRAM is 2.2mW and for proposed adiabatic technique is 0.3mW

Authors and Affiliations

J. Dhanasekar
Assistant Professor, Department of ECE,Sri Eshwar College of Engineering, Kinathukadavu, Tamil Nadu, India
Dr. V. K. Sudha
Associate Professor, Department of ECE, Dr. Mahalingam College of Engineering and Technology, Pollachi, Tamil Nadu, India
Rinu Johnson
Physical Design Engineer, Cadence Design Systems, Bangalore, Karnataka, India

Complementary Metal–Oxide–Semiconductor (CMOS), Static Random Access Memory (SRAM)

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Publication Details

Published in : Volume 3 | Issue 1 | January-February 2017
Date of Publication : 2017-02-28
License:  This work is licensed under a Creative Commons Attribution 4.0 International License.
Page(s) : 531-535
Manuscript Number : IJSRSET1731122
Publisher : Technoscience Academy

Print ISSN : 2395-1990, Online ISSN : 2394-4099

Cite This Article :

J. Dhanasekar, Dr. V. K. Sudha, Rinu Johnson, " A Study on Conventional SRAM and Adiabatic SRAM, International Journal of Scientific Research in Science, Engineering and Technology(IJSRSET), Print ISSN : 2395-1990, Online ISSN : 2394-4099, Volume 3, Issue 1, pp.531-535, January-February-2017.
Journal URL : http://ijsrset.com/IJSRSET1731122

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