Evolution of Multigate MOSFETs

Authors(2) :-Sushmita Jaiswal, Dr. Sarvesh Dubey

Undoped cylindrical gate all around (GAA) MOSFET is a radical invention and a potential candidate to replace conventional MOSFET, as it introduces new direction for transistor scaling. In this work, the sensitivity of process parameters like channel length (Lg), channel thickness (tSi), and gate work function (φM) on various performance metrics of an undoped cylindrical GAA to nanowire MOSFET are systematically analyzed. The electrical characteristics such as on current (Ion), subthreshold leakage current (Ioff), threshold voltage (Vth) and similarly analog/RF performances like transconductance (gm), total gate capacitance (Cgg), and cut-off frequency (fT) are evaluated and studied with the variation of device design parameters. The discussion give direction towards low standby operating power (LSTP) devices as improvement in Ioff is approaching 90% in nanowire MOSFET. All the device performances of undoped GAA MOSFET are investigated through Sentaurus device simulator from Synopsis Inc.This paper presents the various device structure of MOSFETs like SOI-MOSFET, Double gate Mosfet, Trigate mosfet, Multigate mosfet ,Nanowire Mosfets,High -K Mosfets& their deserves. To grasp during a easy means , mathematical ideas of device physics skipped

Authors and Affiliations

Sushmita Jaiswal
Department of Electronics and Communication Engineering, ShriRamswaroop Memorial University (SRMU, UGC Affiliated), Lucknow
Dr. Sarvesh Dubey
Associate Professor Electronics and Communication Engineering, ShriRamswaroop Memorial University (SRMU, UGC Affiliated), Lucknow

SINGLE-GATE- SOI MOSFET, DOUBLE-GATE SOI MOSFETs, GAA, FinFETs .

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Publication Details

Published in : Volume 3 | Issue 3 | May-June 2017
Date of Publication : 2017-06-30
License:  This work is licensed under a Creative Commons Attribution 4.0 International License.
Page(s) : 369-373
Manuscript Number : IJSRSET173386
Publisher : Technoscience Academy

Print ISSN : 2395-1990, Online ISSN : 2394-4099

Cite This Article :

Sushmita Jaiswal, Dr. Sarvesh Dubey, " Evolution of Multigate MOSFETs, International Journal of Scientific Research in Science, Engineering and Technology(IJSRSET), Print ISSN : 2395-1990, Online ISSN : 2394-4099, Volume 3, Issue 3, pp.369-373, May-June-2017. Citation Detection and Elimination     |     
Journal URL : https://ijsrset.com/IJSRSET173386

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