Study of Electrical Resistivity and Mobility of Single Crystals of W0.85Se2 Grown By DVT Method

Authors(1) :-D. K. Patel

The photo-voltaic criteria established by solar cell base materials like WSe2. Single crystals of W0.85Se2 belonging to transition metal dichalcogenides MX2 group are synthesized in the laboratory. Since the crystals are grown by Direct Vapor Transport (DVT) technique. The electrical transport properties of W0.85Se2 single crystal are studied and resistivity through Van der Pauw method in the high temperature range (313K388K) is obtained. Employing the Hall Effect measurements, Hall coefficient, mobility as well as carrier concentration have been studied. The Van der Pauw technique is also used to evaluate the type, mobility and carrier concentration of W0.85Se2 single crystals.

Authors and Affiliations

D. K. Patel
Department of Physics, C. U. Shah Science College, Ahmedabad, Gujarat, India.

Temperature, Decompose, Carrier Concentration, Resistivity

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Publication Details

Published in : Volume 3 | Issue 3 | May-June 2017
Date of Publication : 2017-06-30
License:  This work is licensed under a Creative Commons Attribution 4.0 International License.
Page(s) : 699-702
Manuscript Number : IJSRSET1738249
Publisher : Technoscience Academy

Print ISSN : 2395-1990, Online ISSN : 2394-4099

Cite This Article :

D. K. Patel, " Study of Electrical Resistivity and Mobility of Single Crystals of W0.85Se2 Grown By DVT Method, International Journal of Scientific Research in Science, Engineering and Technology(IJSRSET), Print ISSN : 2395-1990, Online ISSN : 2394-4099, Volume 3, Issue 3, pp.699-702, May-June-2017.
Journal URL : http://ijsrset.com/IJSRSET1738249

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