Design of Non-Volatile Cache Memory Using Spin Orbit Torque MRAM and Schottky Diode

Authors(3) :-Venkatesh Ramu, G N Kodanda Ramaiah, Santhosh B Panjagal

The cache memory design by using Spin Orbit Torque (SOT)-Magnetic (or Magneto-resistive) Random Access Memory (or) MRAM is a next generation developing and promising technology. This SOT-MRAM with schottky diode offers too many benefits such as non-volatility nature, small in size, higher density, low power consumption, scalability and infinite times of endurance. In this project, we provide an exhaustive evaluation of SOT-MRAM with schottky diode at both logic-level and layout-level in terms of size, performance, complexity and energy related parameters and compare them with the existing other cache memory technologies. The designed architecture at layout-level analysis shows that proposed SOT MRAM with schottky diode (using for the L1 & L2-Data-cache and L1& L2-Instruction-cache) will decreases the size by 83.3% and 46.7%, energy consumption reduced by 11.68x and 0.013x and achieve the similar write-read speed compared to an SRAM-only and existing SOT MRAM con?guration. Furthermore, the data retention failure chance of proposed SOT-MRAM is 27x lesser than the probability of radiation-induced soft errors in SRAM, for a 90nm technology. All of these benefits will make the SOT-MRAM with schottky diode a viable choice for processor cache memory.

Authors and Affiliations

Venkatesh Ramu
PG GATE Scholar, VLSI System Design, Electronic & Communication Engineering, Kuppam Engineering College, Kuppam, Andhra Pradesh, India
G N Kodanda Ramaiah
Professor & HOD, Electronic & Communication Engineering, Kuppam Engineering College, Kuppam, Andhra Pradesh, India
Santhosh B Panjagal
Associate Professor, Electronic & Communication Engineering, Kuppam Engineering College, Kuppam, Andhra Pradesh, India

SOT-spin orbit torque, MRAM- magnetic random access memory, schottky diode, non-volatility, cache memory, reliability, endurance, retention-failure rate.

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Publication Details

Published in : Volume 4 | Issue 10 | September-October 2018
Date of Publication : 2018-09-30
License:  This work is licensed under a Creative Commons Attribution 4.0 International License.
Page(s) : 280-289
Manuscript Number : IJSRSET1841012
Publisher : Technoscience Academy

Print ISSN : 2395-1990, Online ISSN : 2394-4099

Cite This Article :

Venkatesh Ramu, G N Kodanda Ramaiah, Santhosh B Panjagal, " Design of Non-Volatile Cache Memory Using Spin Orbit Torque MRAM and Schottky Diode, International Journal of Scientific Research in Science, Engineering and Technology(IJSRSET), Print ISSN : 2395-1990, Online ISSN : 2394-4099, Volume 4, Issue 10, pp.280-289, September-October-2018. Available at doi : https://doi.org/10.32628/18410IJSRSET
Journal URL : http://ijsrset.com/IJSRSET1841012

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