G-Optimal Design in Non-linear Models to Increase Silicon Oxide Purity Levels and Electrical Conductivity

Authors(4) :-Muklas Riva'i, Bagus Sartono, Erfiani, Irzaman

Optimal design is a design which required in determining the points of variable factors that would be attempted  to optimize the relevant information so that fulfilled the desired criteria. The optimal fulfillment criteria based on the information matrix of the selected model. The experimental design in silicon oxide with a purity rise silicon oxide obtained following the exponential decay distribution and approaches an asymptotic value which is a non-linear models. This research is aimed to obtain the best designs in determining the levels of silicon. The method used is the G-optimal criterion on non-linear models using the exchange algorithm. G-optimal is an optimal criteria in order to minimize the maximum variety of the estimation responses. The results of this study shows that the best G-optimal design  for non-linear models to the respons of purification levels of SiO2 (Y1) and electrical conductivity (Y2) is alternative 3 (Y1 = 0.75 and Y2 = 0.25) with temperature levels of 720oC, 725oC, 730oC, 735oC, 765oC,775oC, 835oC, 840oC, 880oC, 885oC, 890oC and 895oC with the G-efficiency value of  Y1 is 78.10% and the G-efficiency value of Y2 is 67.48%.

Authors and Affiliations

Muklas Riva'i
Department of Statistics, Bogor Agricultural University, Bogor, West Java, Indonesia
Bagus Sartono
Department of Statistics, Bogor Agricultural University, Bogor, West Java, Indonesia
Erfiani
Department of Statistics, Bogor Agricultural University, Bogor, West Java, Indonesia
Irzaman
Department of Physics, Bogor Agricultural University, Bogor, West Java, Indonesia

G-Optimal, Non-Linear Model, Optimal Design, Silicon Oxide

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Publication Details

Published in : Volume 4 | Issue 11 | November-December 2018
Date of Publication : 2018-12-30
License:  This work is licensed under a Creative Commons Attribution 4.0 International License.
Page(s) : 150-155
Manuscript Number : IJSRSET21841110
Publisher : Technoscience Academy

Print ISSN : 2395-1990, Online ISSN : 2394-4099

Cite This Article :

Muklas Riva'i, Bagus Sartono, Erfiani, Irzaman, " G-Optimal Design in Non-linear Models to Increase Silicon Oxide Purity Levels and Electrical Conductivity, International Journal of Scientific Research in Science, Engineering and Technology(IJSRSET), Print ISSN : 2395-1990, Online ISSN : 2394-4099, Volume 4, Issue 11, pp.150-155, November-December-2018. Available at doi : https://doi.org/10.32628/IJSRSET21841110
Journal URL : http://ijsrset.com/IJSRSET21841110

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