Evolution of Multigate MOSFETs
Keywords:
SINGLE-GATE- SOI MOSFET, DOUBLE-GATE SOI MOSFETs, GAA, FinFETs .Abstract
Undoped cylindrical gate all around (GAA) MOSFET is a radical invention and a potential candidate to replace conventional MOSFET, as it introduces new direction for transistor scaling. In this work, the sensitivity of process parameters like channel length (Lg), channel thickness (tSi), and gate work function (φM) on various performance metrics of an undoped cylindrical GAA to nanowire MOSFET are systematically analyzed. The electrical characteristics such as on current (Ion), subthreshold leakage current (Ioff), threshold voltage (Vth) and similarly analog/RF performances like transconductance (gm), total gate capacitance (Cgg), and cut-off frequency (fT) are evaluated and studied with the variation of device design parameters. The discussion give direction towards low standby operating power (LSTP) devices as improvement in Ioff is approaching 90% in nanowire MOSFET. All the device performances of undoped GAA MOSFET are investigated through Sentaurus device simulator from Synopsis Inc.This paper presents the various device structure of MOSFETs like SOI-MOSFET, Double gate Mosfet, Trigate mosfet, Multigate mosfet ,Nanowire Mosfets,High -K Mosfets& their deserves. To grasp during a easy means , mathematical ideas of device physics skipped
References
- G. E. Moore, "Cramming more components onto integrated circuits", Proceedings of the IEEE , vol. 86, no. 1, pp. 82-85, 1998.
- "International Technology Roadmap for Semiconductors (ITRS)", SIA, 2003
- S. Cristoloveanu, "Future trends in SOI technologies," Journal of the Korean Physical Society, vol. 39, pp. S52-S55, Dec 2001.
- A. Breed and K.P. Roenker, ?Dual-gate (FinFET) and TriGate MOSFETs: Simulation and design,? Proceedings of the International Semiconductor Device Research Symposium (ISDRS-2003), pp. 150-151, December 2003.
- J-T. Park and J-P Colinge, ?Multiple-Gate SOI MOSFETs: Device Design Guidelines,? IEEE Transactions on Electron Devices, pp. 2222-2228, vol. 49, no. 12, Dec. 2002.
- Aniket Breed and Kenneth P. Roenker, ?A Small-signal, RF Simulation Study of Multiple-gate MOSFET Devices,? IEEE Topical Meeting on Silicon Monolithic ICs in RF Systems, Atlanta, GA, Sept.2004.
- A. Breed and K.P. Roenker, ?Dual-gate (FinFET) and TriGate MOSFETs: Simulation and design,? Proceedings of the International Semiconductor Device Research Symposium (ISDRS-2003), pp. 150-151, December 2003.
- J-T. Park and J-PColinge, ?Multiple-Gate SOI MOSFETs: Device Design Guidelines,? IEEE Transactions on Electron Devices, pp. 2222-2228, vol. 49, no. 12, Dec. 2002.
- Aniket Breed and Kenneth P. Roenker, ?A Small-signal, RF Simulation Study of Multiple-gate MOSFET Devices,? IEEE Topical Meeting on Silicon Monolithic ICs in RF Systems, Atlanta, GA, Sept. 2004.
- Biswajit Ray , Santanu Mahapatra “A New Threshold Voltage Model for Omega Gate Cylindrical Nanowire Transistor”, 21st International Conference on VLSI Design, 1063-9667/08, DOI 10.1109/VLSI.2008.52, page 447-452
- Cong Li, Yiqi Zhuang, Ru Han “Cylindrical surrounding-gate MOSFETs with electrically induced source/drain extension”, Microelectronics Journal
- F. M. Bufler et al., ?Comparison of Semiclassical Transport Formulations Including Quantum Corrections for Advanced Devices with High-K Gate stacks?, Proceeding of 14th IWCE 2010, Pisa, Italy, pp. 319-322 (2010).
Downloads
Published
Issue
Section
License
Copyright (c) IJSRSET
This work is licensed under a Creative Commons Attribution 4.0 International License.