Role of Al3+ in Enhancing the Physical Properties of Sodium Para-Nitrophenolate Dihydrate Crystals for Optoelectronic and Nonlinear Optical Applications

Authors

  • S. Shek Dhavud  Department of Physics, Jamal Mohamed College (Autonomous), Affiliated to Bharathidasan University, Trichy, Tamilnadu, India
  • J. Thomas Joseph Prakash  

Keywords:

Nonlinear optics, Semiorganic, Photoluminescence, EDAX.

Abstract

The semiorganic nonlinear optical single crystals of undoped and Al3+ doped sodium para-nitrophenolate dihydrate (SPNPD) were effectively grown by a conventional slow evaporation solution growth technique at room temperature. FT-IR spectrum shows various functional groups that are due to fundamental overtones of Al3+ and SPNPD entities. The crystallinity of the materials is affirmed by powder XRD investigation. Single crystal XRD demonstrates that undoped and doped crystals have orthorhombic crystal system with space group Ima2. The optical absorption analyses showed that the absorption edge shifted towards lower wavelengths with the incorporation of Al3+ content. The color centered emissions in the grown crystals have been tested by the photoluminescence study. Surface morphological changes because of doping are observed by SEM analysis and incorporation of dopant into the crystalline matrix of SPNPD even at the low concentrations was well affirmed by energy dispersive X-ray spectroscopy (EDAX). TG/DTA investigations were performed to study the thermal behaviour of the samples. The notable enhancement in mechanical strength was remarked due to doping. The SHG measurements also carried out on undoped and doped samples, which reveal the relative SHG efficiency has been enhanced due to doping.

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Published

2017-12-31

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Research Articles

How to Cite

[1]
S. Shek Dhavud, J. Thomas Joseph Prakash, " Role of Al3+ in Enhancing the Physical Properties of Sodium Para-Nitrophenolate Dihydrate Crystals for Optoelectronic and Nonlinear Optical Applications, International Journal of Scientific Research in Science, Engineering and Technology(IJSRSET), Print ISSN : 2395-1990, Online ISSN : 2394-4099, Volume 3, Issue 8, pp.01-14, November-December-2017.