TEP Measurements of Tungsten Diselenide WSe2 Single Crystals grown Using DVT Method

Authors

  • D. K. Patel  Department of Physics, C.U. Shah science college, Ahmadabad, Gujarat, India

Keywords:

Crystal Growth, Hall Effect, Thermoelectric Effect, Seebeck Effect

Abstract

The Tungsten diselenide (WSe2) single crystal is a member of transition metal dichalcogenides group. The thermoelectric power of as grown crystals was measured in the temperature range of 318K to 403K. Band gap eg, See back coefficients, effective mass of holes mh were carried out for grown crystals. The positive sign of thermoelectric power depicted their p-type nature within the temperature range studied.

References

  1. J Cheon, JE Gozum and GS Girolami (1997), Chemistry of Materials 9(8) 1847.
  2. Lewkebandara TS and Winter CH (1994). Advanced Materials 6(3) 237.
  3. Dave MS, Patel KR and Vaidya Rajiv (2012). International Journal of Physics and Mathematical Sciences 2(3) 1-5.
  4. Vaidya Rajiv, Dave Mehul, Patel SG and Jani AR (2005). Indian Journal of Physics 79(1) 85-87.
  5. Kaushik R. Patel and Duhita Lakhataria, (2016). International Journal of Physics and Mathematical Sciences 6(1) 11-16.
  6. K P Mohanchandra and J Uchil, 1997,Thin Solid Films, 305 124.
  7. F.Frindt and A.D.Yoffe Proc Roy SOC., London, 273 (1963) 69
  8. H. Tributsch Ber Bunsenges Phys Chem, 81 (1977) 361
  9. H. Tributsch Struct.Bonding, 49 (1982) 127
  10. S.R.Guha Thakurta and A.K.Datta, J Phys Chem Solids, 44 (1983) 407

International Journal of Scientific Research in Science, Engineering and Technology

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Published

2016-08-30

Issue

Volume 2, Issue 4, July-August-2016

Section

Research Articles

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How to Cite

[1]
D. K. Patel "TEP Measurements of Tungsten Diselenide WSe2 Single Crystals grown Using DVT Method" International Journal of Scientific Research in Science, Engineering and Technology (IJSRSET), Print ISSN : 2395-1990, Online ISSN : 2394-4099, Volume 2, Issue 4, pp.880-882, July-August-2016.