Analysis of Electrical Properties of Some Rare Earth Chalcogenides Sm1 –X Euxs And Sm1 –Xyxs Under Pressure
Keywords:
Activation Energy Carrier Concentration, Electrical Resistivity And Electronic Phase TransitionAbstract
The rare earth chalcogenides are some of structurally simplest materials and most of crystallize in the NaCl- type structure. In these compounds, most of rare earth ions are trivalent. Most of rare earth chalcogenides are governed by the nature of their f-electronic state. In the present paper, the study the effect of pressure on the electrical and structural properties of rare earth chalcogenides Sm1 –x EuxS and Sm1 –x YxS. These compound are of current interest due to their potential application in the field non-liner optics, electro optic devices, composite laser. In this paper, we also developed a theoretical model to calculate the electrical parameters such as activation energy, carrier concentration, electrical resistivity, carrier mobility, electrical conductivity under the effect of pressure. The electronic phase transition is reported.
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