X-Ray Diffraction Technique to observe the Changes in Amorphous Silicon Film Solar Cells by Aluminium Induction

Abstract

The fabrication of Poly-crystalline films were done by Aluminium Induced Crystallization (AIC) of plasma Enhanced Chemical Vapour Deposited (PECVD) amorphous silicon (a-si) films. The characterizations had been done at different annealing temperatures (300 and 400C), below the eutectic temperature of the Si-Al binary system. The position of the Al layer with respect to si layer was also varied. The crystallized film-properties were analysed using X-ray diffraction, Raman Spectroscopy, Ellipsometry and many other techniques. The results showed that the process of crystallization occurred more readily when a-si was sandwiched between the substrate and the Al layer. The interfacial layer between the Al and a-si film played an important role also during annealing.