Study of Raman Redshift of Nanoscale Semiconductors

Authors

  • Madan Singh  Department of Physics and Electronics, National University of Lesotho, P O Roma 180, L
  • L.M. Mafereka  Department of Physics and Electronics, National University of Lesotho, P O Roma 180, Lesotho, Southern Africaesotho, Southern Africa

DOI:

https://doi.org/10.32628/IJSRSET2310363

Keywords:

Nanomaterials, cohesive energy, dangling bonds, phonon frequency

Abstract

Considering the Lu model and dangling bonds, we derived equations for the optoelectrical properties of semiconductors at the nanoscale. The size and shape-dependent band gap and phonon frequency of nanoparticles are studied. It is reported that the bandgap increases on decreasing the size, while the phonon frequency decreases on reducing the particle size in the nano range. The effect of shape is included in our research. It is projected that the effect is considerable on changing the shape from spherical to film shape. The developed model may provide new insight, into where the experimental findings are missing.

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International Journal of Scientific Research in Science, Engineering and Technology

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Published

2023-06-30

Issue

Volume 10, Issue 3, May-June-2023

Section

Research Articles

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How to Cite

[1]
Madan Singh, L.M. Mafereka "Study of Raman Redshift of Nanoscale Semiconductors" International Journal of Scientific Research in Science, Engineering and Technology (IJSRSET), Print ISSN : 2395-1990, Online ISSN : 2394-4099, Volume 10, Issue 3, pp.153-157, May-June-2023. Available at doi : https://doi.org/10.32628/IJSRSET2310363