Effect of Substrate Temperature on Structural and Morphological Properties of Ga2O3 NPS Thin Films by (PLD) Method
DOI:
https://doi.org/10.32628/IJSRSET2512318Keywords:
Gallium oxide Ga₂O₃ nanoparticles, substrate temperature, pulsed laser depositionAbstract
In this study, thin films of Gallium oxide nanoparticles were deposited using the method of pulsed laser deposition (PLD) on a glass substrate under different substrate temperatures (400, 500, and 600 K ) before and after annealing. The Nd-YAG laser was utilized at the wavelength ( 1064 nm ) and the frequency (5 Hz) at 130 0C. The effect of substrate temperature value before and after annealing on the Structural and morphological Properties was studied by UV-VIS, X-ray diffraction )XRD), scanning electron microscopy(SEM) and Atomic force microscopy (AFM) . The outcomes XRD showed that the structure of Ga2O3 nanoparticles is a polycrystalline structure of the monoclinic type with Prominent crystal orientations of (-401), (-202), (- 111 ), (111), and (-312). It is according to JCPDS card No.00-041-1103. Crystallite size for complete models increased with the growth substrate temperature value before and after annealing. The results of (SEM) for gallium oxide nanoparticles prepared with different substrate temperatures (400, 500, and 600 k) before and after annealing showed that the films increase their homogeneity and the voids decrease with increasing temperatures. The energy band gap decreased with increasing substrate temperatures, and the absorption edge was in the UV zone..
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