Ultra-Low Noise Photodetection in Exfoliated GaSe: Realizing Sub-Femtoampere Dark Currents for High-Detectivity Sensing
DOI:
https://doi.org/10.32628/IJSRSET261347Keywords:
Gallium Selenide (GaSe), 2D Optoelectronics, Ultra-low Dark Current, Metal–Semiconductor–Metal (MSM), Noise Minimization, Exfoliated NanosheetsAbstract
This study investigates the strategic development and optoelectronic characterization of ultra-low noise photodetectors fabricated from mechanically exfoliated gallium selenide ("GaSe" )nanosheets. While contemporary research in 2D optoelectronics predominantly targets high responsivity through internal gain mechanisms-often incurring significant noise penalties-this work adopts a “noise-centric” design philosophy to optimize the specific detectivity (D^* ). By integrating a ∼20" nm" thick "GaSe" flake within a precision-engineered metal–semiconductor–metal (MSM) architecture utilizing "Cr/Au" electrodes, we demonstrate an unprecedented dark current floor of 1" fA " at zero bias, maintaining sub-100" fA" stability up to a 2" V" operating regime. Spectroscopic analysis reveals a sharp responsivity cutoff at 620" nm" , correlating precisely with the 621" nm " photoluminescence (PL) emission peak, thereby confirming band-to-band transition dominance. Although the device yields a conservative responsivity of 2.7" mA/W" , the radical suppression of both shot noise and thermal noise components enables a specific detectivity that rivals state-of-the-art commercial silicon-based sensors. These findings underscore the viability of "GaSe " as a primary candidate for “green” electronics and battery-less, always-on remote sensing applications, where extreme noise minimization is the critical performance metric.
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Y. Wang, Y. Tang, H. Li et al., "p-GaSe/n-Ga2O3 van der Waals Heterostructure Photodetector at Solar-Blind Wavelengths with Ultrahigh Responsivity and Detectivity," ACS Photonics, vol. 8, no. 12, pp. 3500–3508, 2021.
A. Islam, J. Lee, and P. X.-L. Feng, "Atomic Layer GaSe/MoS2 van der Waals Heterostructure Photodiodes with Low Noise and Large Dynamic Range," ACS Photonics, vol. 5, no. 6, pp. 2493–2500, 2018.
Y. Gao, X. Cai, S. Li et al., "High responsivity p-GaSe/n-Si van der Waals heterojunction phototransistor with a Schottky barrier collector for ultraviolet to near-infrared band detection," Appl. Phys. Lett., vol. 122, no. 21, p. 211105, 2023.
G. W. Mudd, S. A. Svatek, L. Hague et al., "High Broad-Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures," Adv. Mater., vol. 27, no. 25, pp. 3760–3766, 2015.
P. J. Ko, A. Abderrahmane, T. Takamura et al., "Thickness dependence on the optoelectronic properties of multilayered GaSe based photodetector," Nanotechnology, vol. 27, no. 32, p. 325202, 2016.
P. Hu, L. Wang, M. Yoon et al., "Highly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates," Nano Lett., vol. 13, no. 4, pp. 1649–1654, 2013.
L. Yu, X. Liu, M. Chen et al., "Activation of the photosensitive potential of 2D GaSe by interfacial engineering," ACS Appl. Mater. Interfaces, vol. 16, no. 8, pp. 10400–10410, 2024.
J. Jie et al., "Two-dimensional layered gallium selenide: preparation, properties, and applications," in Two-Dimensional Transition-Metal Dichalcogenides, Wiley, 2016, ch. 1, pp. 1–32.
B. Sun et al., "Progress on Crystal Growth of Two-Dimensional Semiconductors for Optoelectronic Applications," Crystals, vol. 8, no. 6, p. 252, 2018.
P. Hu, Z. Wen, L. Wang et al., "Synthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors," ACS Nano, vol. 6, no. 7, pp. 5988–5994, 2012.
Q. He et al., "GaSe/MoS2 Heterostructure with Ohmic-Contact Electrodes for Fast, Broadband Photoresponse, and Self-Driven Photodetectors," Adv. Mater. Interfaces, vol. 7, no. 4, p. 1901848, 2020.
C. Wu, M.-Z. Wang, J. Li et al., "Non-Ultrawide Bandgap Semiconductor GaSe Nanobelts for Sensitive Deep Ultraviolet Light Photodetector Application," Small, vol. 18, no. 15, p. 2200594, 2022.
S. Sorifi et al., "High-Temperature Performance of a GaSe Nanosheet-Based Broadband Photodetector," ACS Appl. Electron. Mater., vol. 2, no. 2, pp. 450–458, 2020.
D. Lembke, S. Bertolazzi, and A. Kis, "Single-layer MoS2 electronics," Acc. Chem. Res., vol. 48, no. 1, pp. 100–110, 2015.
W. Zhang, M.-H. Chiu et al., "Role of Metal Contacts in High-Performance Phototransistors Based on WSe2 Monolayers," ACS Nano, vol. 8, no. 8, pp. 8653–8661, 2014.
A. Kumar, A. Pelella, K. Intonti et al., "n-Type GaSe Thin Flake for Field Effect Transistor, Photodetector, and Optoelectronic Memory," Adv. Electron. Mater., vol. 10, no. 4, p. 2400010, 2024.
C. Zhao et al., "Epitaxy of GaSe Coupled to Graphene: From In Situ Band Engineering to Photon Sensing," Small, p. 2404809, 2024.
X. Xiong, Q. Zhang, X. Zhou et al., "One-step synthesis of p-type GaSe nanoribbons and their excellent performance in photodetectors and phototransistors," J. Mater. Chem. C, vol. 4, no. 15, pp. 3165–3171, 2016.
T. I. Alam, S. U. Hani, S. Ahmed et al., "All van der Waals photodetector for ultralow dark current," Proc. SPIE, vol. 12900, p. 129000O, 2024.
S. Zhao et al., "Toward Air Stability of Thin GaSe Devices: Avoiding Environmental and Laser-Induced Degradation by Encapsulation," Adv. Funct. Mater., vol. 28, no. 45, p. 1805304, 2018.
Y. Cao, K. Cai, P. Hu et al., "Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors," Sci. Rep., vol. 5, p. 8130, 2015.
G. Yildirim, "A GaSe/Si-based vertical 2D/3D heterojunction for high-performance self-driven photodetectors," Nanoscale Adv., vol. 4, no. 2, pp. 475–486, 2022.
R. K. Saroj, P. Guha, S. Lee et al., "Photodetector arrays based on MBE-grown GaSe/graphene heterostructure," Adv. Opt. Mater., vol. 10, no. 14, p. 2200332, 2022.
R. Lu, J. Liu, H. Luo et al., "Graphene/GaSe-Nanosheet Hybrid: Towards High Gain and Fast Photoresponse," Sci. Rep., vol. 6, p. 19161, 2016.
L. Wei, Z. J. Wu, Y. Wei et al., "High-Gain and Tunable Linear Photodetection in 2D Tunneling Heterostructures Through Potential Engineering," Adv. Funct. Mater., p. 2411736, 2024.
D. Kufer and G. Konstantatos, "Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials," ACS Photonics, vol. 3, no. 12, pp. 2197–2210, 2016.
J. Peng et al., "In Situ Induced Asymmetric Schottky Contacts Via Localized Ultrafast Laser Irradiation for Ultrasensitive, Self-Powered, 2d Photodetectors," SSRN Electron. J., 2023.
X. Zhang, R. Li, Y. Yu et al., "Dark current mechanisms and suppression strategies for infrared photodetectors based on two-dimensional materials," Laser Photon. Rev., vol. 17, no. 8, p. 2300936, 2023.
A. Islam, J. Lee, and P. X.-L. Feng, "Atomic Layer GaSe/MoS2 van der Waals Heterostructure Photodiodes," ACS Photonics, vol. 5, p. 2493, 2018.
Y. Gao, X. Cai, S. Li et al., "High responsivity p-GaSe/n-Si van der Waals heterojunction phototransistor," Appl. Phys. Lett., vol. 122, p. 211105, 2023.
J. Ning, Y. Zhou, J. Zhang et al., "Self-driven photodetector based on a GaSe/MoSe2 selenide van der Waals heterojunction with the hybrid contact," Appl. Phys. Lett., vol. 117, no. 20, p. 201104, 2020.
P. Chen et al., "GeSe/MoTe2 vdW heterostructure for UV–VIS–NIR photodetector with fast response," Appl. Phys. Lett., vol. 121, p. 091104, 2022.
Y. Chen, Y. Ma, H. Liang et al., "New paradigms of 2D layered material self-driven photodetectors," Nanoscale, vol. 16, no. 12, pp. 6145–6160, 2024.
T. I. Alam et al., "All van der Waals photodetector for ultralow dark current," Proc. SPIE, vol. 12900, p. 129000O, 2024.
P. Ye, H. Xiao, Q. Q. Zhu et al., "Si-CMOS-compatible 2D PtSe2-based self-driven photodetector with ultrahigh responsivity and specific detectivity," Sci. China Mater., vol. 65, no. 10, pp. 2750–2758, 2022.
Q. Lv, F. Yan, X. Wei et al., "High-Performance, Self-Driven Photodetector Based on Graphene Sandwiched GaSe/WS2 Heterojunction," Adv. Opt. Mater., vol. 6, no. 5, p. 1700490, 2018.
F. Wang, T. Zhang, R. Xie et al., "How to characterize figures of merit of two-dimensional photodetectors," Nat. Commun., vol. 14, p. 1823, 2023.
N. Liu, S. Zhou, N. Gao et al., "Tuning Schottky barriers for monolayer GaSe FETs by exploiting a weak Fermi level pinning effect," Phys. Chem. Chem. Phys., vol. 20, no. 21, pp. 14667–14673, 2018.
X. Wu, W. Guo, M. Li et al., "Influence of the Device Structure on the Electrical and Photodetector Properties of n-MoS2/p-GaSe Heterojunction Optoelectronic Devices," ACS Appl. Nano Mater., vol. 6, no. 11, pp. 9410–9420, 2023.
J. Li et al., "Ultrafast Self-Driven WSe2 Photodetectors with Bottom Schottky Contacts," Adv. Sci., p. 2510373, 2025.
G. Del Pozo et al., "Solution-processed GaSe nanoflake-based films for photoelectrochemical water splitting and photoelectrochemical-type photodetectors," Adv. Funct. Mater., vol. 30, no. 15, p. 1909572, 2020.
S. Debnath et al., "Printed MoSe2/GaAs Photodetector Enabling Ultrafast and Broadband Photodetection up to 1.5 μm," ACS Appl. Mater. Interfaces, vol. 16, no. 2, pp. 2540–2549, 2024.
J. Yu et al., "Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering," ACS Appl. Mater. Interfaces, vol. 16, no. 8, pp. 10400–10410, 2024.
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